? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 120 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c60a e ar t c = 25 c60mj e as t c = 25 c 2.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 175 c, r g = 4 ? p d t c = 25 c 714 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1 .13/10 nm/lb.in. weight to-3p 5.5 g to-264 10 g g = gate d = drain s = source tab = drain ds99207(09/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 175 c 500 a r ds(on) v gs = 10 v, i d = 0.5 i d25 22 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. to-264(sp) (ixtk) g d s (tab) to-3p (ixtq) g d s d (tab) v dss = 200 v i d25 = 120 a r ds(on) 22 m ? ? ? ? ? ixtq 120n20p ixtk 120n20p
ixys reserves the right to change limits, test conditions, and dimensions. ixtk 120n20p ixtq 120n20p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 40 63 s c iss 6000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1300 pf c rss 265 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 35 ns t d(off) r g = 3.3 ? (external) 100 ns t f 31 ns q g(on) 152 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 nc q gd 75 nc r thjc 0.21 k/w r thck to-3p 0.21 k/w r thck to-264 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 120 a i sm repetitive 300 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 180 ns -di/dt = 100 a/ s q rm v r = 100 v 3.0 c 1 2 3 to-3p outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-264 outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 dim.
? 2004 ixys all rights reserved ixtk 120n20p ixtq 120n20p fig. 2. extended output characteristics @ 25 o c 0 30 60 90 120 150 180 210 240 270 0246810121416 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 20 40 60 80 100 120 0123456 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 120a i d = 60a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.5 1 1.5 2 2.5 3 3.5 4 0 30 60 90 120 150 180 210 240 270 300 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixtk 120n20p ixtq 120n20p fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 100v i d = 60a i g = 10ma fig. 7. input admittance 0 30 60 90 120 150 180 44.5 55.5 66.5 77.5 88.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 30 60 90 120 150 180 210 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25 s
? 2004 ixys all rights reserved ixtk 120n20p ixtq 120n20p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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